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NCE30H10G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE30H10G product

NCE30H10G

MOSFETs - Single

MOSFETN-Channel30VPower

The NCE30H10G is a high-performance 30V, 100A N-Channel MOSFET in a DFN5X6-8L package, optimized for high-efficiency power conversion and switching applications.

Best for

  • DC/DC converters
  • Synchronous rectification

Avoid if

  • Applications requiring >30V VDS

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
100 A
RDS(ON)
1.9 mΩ (typ)

Compliance & Environment

RoHS
Pb-free
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

548c127c9f9623079ec37ec18ba44019_2206211401_Wuxi-NCE-Power-Semiconductor-NCE30H10G_C502869.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE30H10G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET designed for high-efficiency power management, featuring low on-resistance and high current handling.