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NCE30H12 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE30H12 product

NCE30H12

MOSFETs - Single

MOSFETN-ChannelPower30V

The NCE30H12 is a high-performance 30V, 120A N-Channel MOSFET designed for efficient power switching and high-frequency applications.

Best for

  • Power switching
  • Uninterruptible power supplies (UPS)
  • High-frequency circuits

Avoid if

  • Applications requiring extremely low-profile surface mount packages

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
120 A
RDS(on)
3.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

3b9bda2067f163ce70fee15a1a499a0a_2004201605_Wuxi-NCE-Power-Semiconductor-NCE30H12_C502785.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE30H12: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The NCE30H12 is an N-Channel enhancement mode power MOSFET using advanced trench technology, optimized for low RDS(on) and high current handling.