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NCE30NP1812K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE30NP1812K product

NCE30NP1812K

MOSFETs - Arrays

MOSFETComplementaryTrench Technology

The NCE30NP1812K is a complementary N-channel and P-channel MOSFET pair in a TO-252-4L package, optimized for high-side switching and power management.

Best for

  • Level-shifted high-side switches
  • General power management

Avoid if

  • Applications requiring currents significantly exceeding 18A/12A

Check before use

  • Thermal design on PCB
  • Gate drive voltage levels

Key specifications

VDS
±30V
ID
18A / -12A
RDS(ON)
41mΩ / 58mΩ
Package
TO-252-4L

Compliance & Environment

RoHS
Lead free
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

bb1fc8c14062d45c051fcb9ebddf4ec5_2106070135_Wuxi-NCE-Power-Semiconductor-NCE30NP1812K_C2686535.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE30NP1812K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a complementary MOSFET device containing both an N-channel and a P-channel enhancement mode MOSFET, manufactured by NCE Power using trench technology.