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NCE30P30K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE30P30K product

NCE30P30K

MOSFETs - Single

P-ChannelMOSFET30V30ATO-252

The NCE30P30K is a robust P-channel MOSFET optimized for high-current switching applications in a TO-252-2L package.

Best for

  • High-side switching
  • DC/DC conversion

Avoid if

  • Applications requiring N-channel logic
  • Extremely space-constrained designs

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-30 A
RDS(ON)
18 mΩ
PD
60 W

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

3c849adbbd2f27412485ddffb86a6851_1811041601_Wuxi-NCE-Power-Semiconductor-NCE30P30K_C130106.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE30P30K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement mode power MOSFET utilizing advanced trench technology for high-efficiency power switching.