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NCE40H29D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE40H29D product

NCE40H29D

MOSFETs - Single

N-ChannelMOSFET40V290A

The NCE40H29D is a high-current N-Channel MOSFET optimized for power-intensive applications requiring low conduction losses.

Best for

  • Power switching
  • UPS systems
  • High-frequency circuits

Avoid if

  • Low-power or space-constrained applications where a smaller package is required.

Check before use

  • Thermal dissipation requirements
  • Gate driver current capability

Key specifications

VDS
40 V
ID
290 A
RDS(ON)
2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

66a538874bf6fd784e9e04181f074e98_1912111437_Wuxi-NCE-Power-Semiconductor-NCE40H29D_C340936.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE40H29D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET using trench technology, rated for 40V and 290A.