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NCE609 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE609 product

NCE609

MOSFETs - Arrays

MOSFETComplementaryPower

The NCE609 is a complementary N and P-Channel MOSFET pair in a TO-252-4L package, suitable for high-side switching and power management.

Best for

  • High-side switching
  • Complementary power stages

Avoid if

  • Applications requiring higher current or voltage ratings

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
40V / -40V
ID
21A / -14A
RDS(ON)
19mΩ / 35mΩ

Compliance & Environment

RoHS
Lead free
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

5f4e837975c766df9690bb3cab6b9118_2004201207_Wuxi-NCE-Power-Semiconductor-NCE609_C502828.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE609: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The NCE609 is a complementary N and P-Channel enhancement mode power MOSFET that uses advanced trench technology.