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NCE60P12K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE60P12K product

NCE60P12K

MOSFETs - Single

P-ChannelMOSFET60VTrench

The NCE60P12K is a -60V, -12A P-Channel MOSFET in a TO-252 package, ideal for high-side switching and DC/DC conversion.

Best for

  • High-side switching
  • DC/DC power conversion
  • LCD display power

Avoid if

  • Applications requiring > -60V breakdown voltage
  • Extremely space-constrained designs where TO-252 is too large

Check before use

  • Thermal design
  • Gate drive voltage compatibility

Key specifications

VDS
-60 V
ID
-12 A
RDS(ON)
100 mΩ
Package
TO-252-2L

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Converters

CAD Models

Download ECAD models for NCE60P12K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The NCE60P12K is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology for low gate charge and low on-resistance.