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NCE65T680F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE65T680F product

NCE65T680F

MOSFETs - Single

MOSFETSuper Junction650VPower

The NCE65T680F is a 650V, 7A N-Channel Super Junction MOSFET in a TO-220F package, optimized for high-efficiency power conversion.

Best for

  • PFC circuits
  • AC/DC power conversion

Avoid if

  • Applications requiring extremely high current handling beyond 7A

Check before use

  • Thermal dissipation requirements for the TO-220F package

Key specifications

VDS
650 V
ID
7 A
RDS(on)
600 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

4e0f972d8b7e397ca024e43c7dfc5d97_2005180934_Wuxi-NCE-Power-Semiconductor-NCE65T680F_C502915.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE65T680F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Super Junction Power MOSFET III designed for high-voltage applications, featuring 650V breakdown voltage and 7A continuous drain current.