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NCE82H110D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCE82H110D product

NCE82H110D

MOSFETs - Single

N-ChannelMOSFET82V110A

The NCE82H110D is an 82V, 110A N-Channel enhancement mode MOSFET designed for high-efficiency power switching and UPS applications.

Best for

  • Power switching
  • Uninterruptible power supplies (UPS)
  • High-frequency circuits

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements for high-current operation

Key specifications

VDS
82 V
ID
110 A
RDS(on)
7 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

f79b3b93cfe37babfe8e319b14eb1241_2004201207_Wuxi-NCE-Power-Semiconductor-NCE82H110D_C502763.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCE82H110D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel power MOSFET utilizing advanced trench technology to achieve low RDS(on) and high ESD capability.