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NCEP025N60G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCEP025N60G product

NCEP025N60G

MOSFETs - Single

MOSFETN-Channel60VPower

The NCEP025N60G is a high-performance 60V, 165A N-Channel MOSFET using Super Trench II technology, ideal for high-efficiency power conversion.

Best for

  • DC/DC Converters
  • Synchronous Rectification

Avoid if

  • Applications requiring through-hole mounting

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
165 A
RDS(on)
2.2 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

eaf57d7cd72aa523a0e29d79e6dc73c3_2307070934_Wuxi-NCE-Power-Semiconductor-NCEP025N60G_C7462066.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCEP025N60G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Super Trench II Power MOSFET with a 60V drain-source voltage and 165A continuous drain current, optimized for high-frequency switching.