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NCEP30T12G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NCEP30T12G product

NCEP30T12G

MOSFETs - Single

MOSFETN-Channel30VPower

The NCEP30T12G is a 30V, 120A N-Channel Super Trench MOSFET in a DFN5X6-8L package, designed for high-efficiency power conversion.

Best for

  • DC/DC converters
  • Synchronous rectification

Avoid if

  • Applications requiring >30V VDS
  • Low-current, low-power circuits where smaller packages are preferred

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
120 A
RDS(on)
1.95 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

c7b52f7da61825a9b2928574e43e9bc8_1810010620_Wuxi-NCE-Power-Semiconductor-NCEP30T12G_C181920.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NCEP30T12G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Super Trench Power MOSFET optimized for high-frequency switching and synchronous rectification.