ProjectsPricingInsights

NDS332P-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NDS332P-HXY product

NDS332P-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23

The NDS332P is a P-Channel MOSFET in an SOT-23 package, designed for low-voltage switching applications.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Gate threshold voltage compatibility

Key specifications

VDS
-20 V
ID
-2.3 A
RDS(ON)
140 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

998b24cb3dd0055a6215fa434529b02c_2404231719_HXY-MOSFET-NDS332P-HXY_C22367180.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NDS332P-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The NDS332P is a P-Channel enhancement mode MOSFET using trench technology, optimized for low gate charge and low RDS(ON) in compact SOT-23 packaging.