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NDS356AP-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NDS356AP-HXY product

NDS356AP-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-2330V

The NDS356AP is a P-channel enhancement mode MOSFET in a SOT-23 package, designed for low-voltage switching and power management applications.

Best for

  • Battery protection
  • Load switching
  • PWM control

Avoid if

  • Applications requiring high-current handling beyond 4A

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(on)
56 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

d6ad32388b4ecfaf816f33109e2af3bb_2403261742_HXY-MOSFET-NDS356AP-HXY_C22367267.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NDS356AP-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel MOSFET utilizing trench technology, optimized for low gate charge and efficient switching at low gate voltages.