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NGTB15N120FL2WG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NGTB15N120FL2WG product

NGTB15N120FL2WG

Transistors - IGBTs - Single

IGBT1200VField StopTrenchPower

The NGTB15N120FL2WG is a high-performance 1200V, 15A Field Stop II Trench IGBT designed for high-speed switching in power-intensive applications like solar inverters and UPS systems.

Best for

  • Solar Inverters
  • UPS Systems
  • Welding Equipment

Avoid if

  • Low-voltage applications where lower Vce(sat) devices are more efficient

Check before use

  • Thermal design for 147W dissipation at 100°C case temperature

Key specifications

Vces
1200 V
Ic (100°C)
15 A
Vce(sat)
2.0 V
Tjmax
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power InvertersIndustrial

Datasheet

NGTB15N120FL2W-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NGTB15N120FL2WG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Insulated Gate Bipolar Transistor (IGBT) with Field Stop II Trench technology, featuring a co-packaged fast recovery diode, rated for 1200V and 15A.