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NGTB25N120FL3WG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NGTB25N120FL3WG product

NGTB25N120FL3WG

Transistors - IGBTs - Single

IGBT1200VTrenchField Stop

The NGTB25N120FL3WG is a 1200V, 25A Ultra Field Stop Trench IGBT designed for high-efficiency power switching applications.

Best for

  • Solar Inverters
  • UPS
  • Welding

Avoid if

  • Low-voltage applications where lower VCEsat devices are more efficient.

Check before use

  • Thermal dissipation requirements at high switching frequencies.

Key specifications

VCES
1200 V
IC (100°C)
25 A
VCEsat
1.7 V
TJmax
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power InvertersIndustrial

Datasheet

NGTB25N120FL3W-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NGTB25N120FL3WG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Insulated Gate Bipolar Transistor (IGBT) with Ultra Field Stop Trench technology, optimized for high-speed switching and low on-state losses.