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NGTB40N120FL2WG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NGTB40N120FL2WG product

NGTB40N120FL2WG

Transistors - IGBTs - Single

IGBT1200VTrenchField Stop

The NGTB40N120FL2WG is a 1200V, 40A Field Stop II Trench IGBT designed for high-efficiency power switching applications.

Best for

  • Solar Inverters
  • UPS
  • Welding

Avoid if

  • Low-voltage or low-power applications where a standard MOSFET would be more efficient.

Check before use

  • Thermal dissipation requirements at 100°C
  • Gate drive voltage levels

Key specifications

VCES
1200 V
IC @ 100°C
40 A
VCE(sat)
2.0 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

PowerIndustrial

Datasheet

NGTB40N120FL2W-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NGTB40N120FL2WG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Insulated Gate Bipolar Transistor (IGBT) with Field Stop II Trench technology, rated for 1200V and 40A (at 100°C).