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NGTB40N120FL3WG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NGTB40N120FL3WG product

NGTB40N120FL3WG

Transistors - IGBTs - Single

IGBT1200VField Stoponsemi

The NGTB40N120FL3WG is a high-performance 1200V, 40A Ultra Field Stop Trench IGBT from onsemi, designed for high-speed switching in power-intensive applications.

Best for

  • Solar Inverters
  • UPS Systems
  • Welding Power Supplies

Avoid if

  • Low-voltage or low-power applications where a standard MOSFET would be more efficient.

Check before use

  • Thermal dissipation requirements and gate driver voltage levels.

Key specifications

Vces
1200 V
Ic (100°C)
40 A
Vce(sat)
1.7 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095

Application

PowerIndustrial

Datasheet

NGTB40N120FL3W-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NGTB40N120FL3WG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an Insulated Gate Bipolar Transistor (IGBT) with Ultra Field Stop Trench technology, featuring a co-packaged soft fast recovery diode.