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NJVMJD122T4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NJVMJD122T4G product

NJVMJD122T4G

Transistors - Bipolar (BJT) - Single

NPNDarlingtonPower TransistorAEC-Q101DPAK

The NJVMJD122T4G is an AEC-Q101 qualified NPN Darlington power transistor in a DPAK package, ideal for automotive and industrial switching or amplification.

Best for

  • Automotive electronics
  • General purpose amplification
  • Low-speed switching

Avoid if

  • High-frequency switching applications
  • Space-constrained designs without adequate heat sinking

Check before use

  • Thermal dissipation requirements
  • SOA limits for specific duty cycles

Key specifications

Type
NPN Darlington
VCEO
100 V
IC (Continuous)
8 A
Power Dissipation
20 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

AutomotivePower SwitchingIndustrial

Datasheet

MJD122-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NJVMJD122T4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN Darlington power transistor designed for general-purpose amplification and low-speed switching, featuring high current gain and built-in base-emitter shunt resistors.