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NJVMJD128T4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NJVMJD128T4G product

NJVMJD128T4G

Transistors - Bipolar (BJT) - Single

PNPDarlingtonPower TransistorDPAK

The NJVMJD128T4G is a high-gain PNP Darlington power transistor in a DPAK package, optimized for general-purpose amplification and low-speed switching.

Best for

  • General purpose amplification
  • Low-speed switching

Avoid if

  • High-frequency switching applications

Check before use

  • Thermal dissipation requirements
  • SOA limits

Key specifications

VCEO
120 V
IC (Continuous)
8 A
hFE (Typ)
2500

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ManagementIndustrial

Datasheet

MJD128-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NJVMJD128T4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a complementary Darlington power transistor designed for surface mount applications, featuring high current gain and a 120V collector-emitter voltage rating.