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NJVMJD31CT4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NJVMJD31CT4G product

NJVMJD31CT4G

Transistors - Bipolar (BJT) - Single

NPNPower TransistorDPAKAEC-Q101

The NJVMJD31CT4G is a 100V, 3A NPN power transistor in a DPAK package, optimized for automotive and general-purpose switching/amplification.

Best for

  • Automotive applications
  • General purpose amplification
  • Low speed switching

Avoid if

  • High-frequency switching applications
  • Space-constrained designs without thermal dissipation capability

Check before use

  • Thermal pad soldering requirements
  • Current gain at operating temperature

Key specifications

VCEO
100 V
IC (Continuous)
3 A
PD
15 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

AutomotivePower Switching

Datasheet

MJD31-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NJVMJD31CT4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN complementary power transistor designed for general-purpose amplification and low-speed switching, featuring AEC-Q101 qualification.