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NSS12100XV6T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NSS12100XV6T1G product

NSS12100XV6T1G

Transistors - Bipolar (BJT) - Single

PNPBJTSOT-563Low Saturation

The NSS12100XV6T1G is a high-efficiency PNP transistor optimized for low-voltage, high-current switching applications in compact portable devices.

Best for

  • DC-DC converters
  • Portable power management
  • Low-voltage motor control

Avoid if

  • Applications requiring voltages above 12 V
  • High-power designs exceeding 650 mW dissipation

Check before use

  • Thermal dissipation requirements
  • Peak current handling (up to 2 A)

Key specifications

Polarity
PNP
VCEO
-12 V
IC
-1.0 A
Package
SOT-563

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

Power ManagementPortable Electronics

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NSS12100XV6T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) designed for low VCE(sat) applications, providing high current capability in a miniature SOT-563 surface-mount package.