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NSS1C200LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NSS1C200LT1G product

NSS1C200LT1G

Transistors - Bipolar (BJT) - Single

PNPBJT100V2ASOT-23

The NSS1C200LT1G is a high-performance PNP low VCE(sat) transistor designed for efficient power switching and management in compact surface-mount applications.

Best for

  • DC-DC converters
  • Portable power management
  • Automotive instrument clusters

Avoid if

  • Applications requiring high-power dissipation beyond 490mW without adequate thermal relief.

Check before use

  • Verify the VCE(sat) at your specific operating current to ensure efficiency.

Key specifications

Polarity
PNP
VCEO
-100 V
IC
-2.0 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

Power ManagementAutomotive

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NSS1C200LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) optimized for low saturation voltage (VCE(sat)) and high current gain, housed in a SOT-23 surface-mount package.