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NSS1C300ET4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NSS1C300ET4G product

NSS1C300ET4G

Transistors - Bipolar (BJT) - Single

PNPBJT100V3ADPAK

The NSS1C300ET4G is a high-performance 100V, 3A PNP BJT from onsemi, optimized for low-saturation voltage applications.

Best for

  • DC-DC converters
  • Motor control
  • Automotive power management

Avoid if

  • Applications requiring NPN polarity
  • Extremely space-constrained designs where DPAK is too large

Check before use

  • Thermal dissipation requirements
  • Base drive current for saturation

Key specifications

VCEO
100 V
IC (Continuous)
3 A
VCE(sat) @ 3A
0.4 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075

Application

Power ManagementMotor Control

Datasheet

NSS1C300E-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NSS1C300ET4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP Bipolar Junction Transistor (BJT) featuring low VCE(sat) and high current gain, designed for efficient switching and power management.