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NSV60600MZ4T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NSV60600MZ4T1G product

NSV60600MZ4T1G

Transistors - Bipolar (BJT) - Single

PNPBJT60V6ASOT-223

The NSV60600MZ4T1G is a high-performance PNP BJT optimized for low-saturation voltage switching and power management.

Best for

  • High-current switching
  • Power management
  • Automotive electronics

Avoid if

  • Applications requiring extremely low profile or non-standard footprints

Check before use

  • Thermal dissipation requirements at maximum current

Key specifications

VCEO
-60 V
IC (Continuous)
-6.0 A
VCE(sat)
-0.350 V @ -6A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

Power ManagementAutomotive

Datasheet

NSS60600MZ4-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NSV60600MZ4T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 60V, 6A PNP Bipolar Junction Transistor from onsemi's e2PowerEdge family, designed for high-efficiency power switching.