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NSVT65010MW6T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NSVT65010MW6T1G product

NSVT65010MW6T1G

Transistors - Bipolar (BJT) - Arrays

Dual PNPMatched PairAEC-Q101

The NSVT65010MW6T1G is an AEC-Q101 qualified dual PNP matched pair transistor in a compact SOT-363 package, ideal for precision signal processing.

Best for

  • Automotive signal conditioning
  • Precision current mirrors
  • Differential amplifiers

Avoid if

  • High-power switching applications exceeding 100mA

Check before use

  • Thermal environment to maintain matching

Key specifications

VCEO
-65 V
IC
-100 mA
hFE Matching
10%
VBE Matching
≤ 2 mV

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

AutomotiveIndustrial

Datasheet

NST65010MW6-D.PDF

800 KB

Datasheet AI

CAD Models

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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual PNP matched pair transistor designed for applications requiring high parameter matching, such as current mirrors and differential amplifiers.