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NSVUMC5NT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NSVUMC5NT1G product

NSVUMC5NT1G

Transistors - Bipolar (BJT) - Arrays

Dual TransistorPre-BiasedAEC-Q101

The NSVUMC5NT1G is a dual complementary (NPN/PNP) pre-biased transistor in a compact SOT-353 package, ideal for space-constrained automotive and industrial applications.

Best for

  • Automotive signal switching
  • Space-constrained logic circuits

Avoid if

  • High-power switching applications exceeding 150mW

Check before use

  • Resistor values (R1=4.7kΩ, R1/R2=0.47)

Key specifications

VCEO
50 V
IC
100 mA
R1
4.7 kΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

AutomotiveGeneral Switching

Datasheet

UMC2NT1-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NSVUMC5NT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual Bias Resistor Transistor (BRT) device containing one NPN and one PNP transistor, each with an integrated monolithic bias resistor network.