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NTBG022N120M3S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTBG022N120M3S product

NTBG022N120M3S

MOSFETs - Single

SiC MOSFET1200VHigh Efficiency

The NTBG022N120M3S is a high-performance 1200V SiC MOSFET optimized for high-efficiency power conversion.

Best for

  • Solar Inverters
  • EV Charging Stations
  • Industrial Power Supplies

Avoid if

  • Low-voltage applications where SiC benefits are not required.

Check before use

  • Gate drive voltage levels and thermal design.

Key specifications

VDSS
1200 V
RDS(on)
22 mΩ
ID
58 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

ntbg022n120m3s-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTBG022N120M3S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) MOSFET with a 1200V rating and 22mΩ on-resistance, designed for high-power industrial applications.