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NTBG060N090SC1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTBG060N090SC1 product

NTBG060N090SC1

MOSFETs - Single

SiC MOSFET900VPower MOSFET

The NTBG060N090SC1 is a 900V SiC MOSFET in a D2PAK-7L package, optimized for high-efficiency power conversion applications.

Best for

  • UPS systems
  • DC-DC converters
  • Boost inverters

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal dissipation requirements.

Key specifications

Vdss
900 V
Id (Tc=25°C)
44 A
RDS(on) (Typ)
60 mOhm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Conversion

Datasheet

ntbg060n090sc1-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTBG060N090SC1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 900V N-Channel Silicon Carbide (SiC) MOSFET designed for high-speed switching and high-efficiency power applications.