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NTBG160N120SC1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTBG160N120SC1 product

NTBG160N120SC1

MOSFETs - Single

SiC MOSFET1200VPower MOSFET

The NTBG160N120SC1 is a 1200V, 19.5A Silicon Carbide (SiC) MOSFET in a D2PAK-7L package, optimized for high-efficiency power conversion.

Best for

  • UPS systems
  • DC-DC converters
  • Boost inverters

Avoid if

  • Applications requiring through-hole mounting
  • Low-voltage circuits where SiC benefits are not required

Check before use

  • Gate drive voltage levels
  • Thermal design for 136W dissipation

Key specifications

Vdss
1200 V
Id
19.5 A
Rds(on)
160 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ConversionIndustrial

Datasheet

567c4bdb2bd89ac3cc97379eae8f8476.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTBG160N120SC1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage N-channel Silicon Carbide (SiC) MOSFET from onsemi, rated for 1200V and 19.5A, housed in a surface-mount D2PAK-7L package.