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NTD18N06L-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTD18N06L-HXY product

NTD18N06L-HXY

MOSFETs - Single

N-ChannelMOSFET60VTrench

The NTD18N06L is a 60V, 20A N-Channel MOSFET in a TO-252-2L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • High-frequency switching applications requiring ultra-low gate charge

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
20 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

76872047d89da899dd3e570bdd37d89a_2404231719_HXY-MOSFET-NTD18N06L-HXY_C22366907.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTD18N06L-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient switching in battery protection and power management circuits.