ProjectsPricingInsights

NTD4804N-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTD4804N-HXY product

NTD4804N-HXY

MOSFETs - Single

N-ChannelMOSFET30V120A

The NTD4804N is a 30V, 120A N-Channel MOSFET in a TO-252-2L package, designed for high-efficiency switching applications.

Best for

  • Battery management
  • Power switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
30 V
Id
120 A
RDS(on)
3.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

3bf4494c0173abe99eabca97d83b28a4_HXY MOSFET(华轩阳电子)&NTD4804N-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTD4804N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.