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NTD4860N-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTD4860N-HXY product

NTD4860N-HXY

MOSFETs - Single

N-ChannelMOSFET30V80A

The NTD4860N is a 30V, 80A N-Channel MOSFET in a DPAK package, optimized for low-voltage switching applications.

Best for

  • Battery management
  • Power switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal design
  • Gate drive compatibility

Key specifications

VDS
30 V
ID
80 A
RDS(ON)
6.8 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

64107f21e8b101f7cdf99aeb4e309128_2403251713_HXY-MOSFET-NTD4860N-HXY_C22366447.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTD4860N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient power switching.