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NTD5867NLT4G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTD5867NLT4G-HXY product

NTD5867NLT4G-HXY

MOSFETs - Single

N-ChannelMOSFET60VDPAK

The NTD5867NLT4G is a 60V, 20A N-Channel MOSFET in a TO-252-2L package, optimized for low-voltage gate drive applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-frequency switching applications where gate charge is critical

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
20 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

cba6501d8eb3b3782add7367b7f21dcb_2403261737_HXY-MOSFET-NTD5867NLT4G-HXY_C22366763.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTD5867NLT4G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using trench technology, rated for 60V and 20A.