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NTD5867NLT4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTD5867NLT4G product

NTD5867NLT4G

MOSFETs - Single

MOSFETN-Channel60V20A

The NTD5867NLT4G is a 60V, 20A N-Channel enhancement mode MOSFET in a TO-252-3L package, optimized for power switching and battery management.

Best for

  • Load switching
  • Battery management
  • Logic level shifting

Avoid if

  • Applications requiring extremely low gate charge
  • High-frequency switching where switching losses dominate

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
20 A
RDS(ON)
<33 mΩ

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power SwitchingBattery Management

Datasheet

6c6ac3e1166aac0860e5902001327d4d_2304031830_TECH-PUBLIC-NTD5867NLT4G_C5350885.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTD5867NLT4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET with a 60V drain-source breakdown voltage and 20A continuous drain current capability.