NTD6416ANT4G-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

NTD6416ANT4G-HXY product

The NTD6416ANT4G is a 100V, 20A N-Channel MOSFET in a TO-252-2L package, designed for efficient switching in battery protection and power management applications.

Best for

Battery protection
Load switching

Avoid if

Applications requiring extremely low gate drive voltages below 4.5V

Check before use

Thermal dissipation requirements

Key specifications

VDS: 100 V
ID: 20 A
RDS(ON): 87 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

ca5d5dda1f9733a18aab0aa7e4bd052f_2309211852_HXY-MOSFET-NTD6416ANT4G-HXY_C18198386.pdf

800 KB

CAD Models

Download ECAD models for NTD6416ANT4G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(ON) and low gate charge.