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NTF3055L108T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTF3055L108T1G product

NTF3055L108T1G

MOSFETs - Single

MOSFETN-Channel60VSOT-223

The NTF3055L108T1G is a 60V, 4A N-Channel Enhancement Mode MOSFET in a SOT-223 package, optimized for power switching and logic level applications.

Best for

  • Load switching
  • Logic level shifting

Avoid if

  • Applications requiring currents significantly above 4A

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
4 A
RDS(ON)
85 mΩ
Package
SOT-223

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power SwitchingLogic Level Shift

Datasheet

1650fcf3ec3e76bcb0a393870366f06c_2308251515_TECH-PUBLIC-NTF3055L108T1G_C7472933.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTF3055L108T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, featuring a 60V drain-source voltage and 4A continuous drain current.