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NTH4L014N120M3P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTH4L014N120M3P product

NTH4L014N120M3P

MOSFETs - Single

SiC MOSFET1200VHigh Power

The NTH4L014N120M3P is a high-performance 1200 V SiC MOSFET from onsemi, optimized for high-efficiency power conversion in industrial and automotive applications.

Best for

  • Solar Inverters
  • EV Charging Stations
  • Uninterruptible Power Supplies (UPS)

Avoid if

  • Low-voltage applications where SiC benefits are not required.

Check before use

  • Gate drive voltage requirements
  • Thermal dissipation capacity

Key specifications

Vdss
1200 V
Id (Tc=25°C)
127 A
RDS(on) (Typ)
14 mΩ
Package
TO-247-4L

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Not Applicable
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

nth4l014n120m3p-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTH4L014N120M3P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an M3 generation N-Channel Silicon Carbide (SiC) MOSFET rated for 1200 V and 127 A, housed in a TO-247-4L package.