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NTH4L015N065SC1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTH4L015N065SC1 product

NTH4L015N065SC1

MOSFETs - Single

SiC MOSFET650VHigh Power

The NTH4L015N065SC1 is a high-power 650V SiC MOSFET optimized for high-efficiency switching in industrial and renewable energy applications.

Best for

  • High-efficiency power conversion
  • Solar energy systems
  • Industrial power supplies

Avoid if

  • Low-power, cost-sensitive consumer electronics

Check before use

  • Gate drive circuit compatibility
  • Thermal dissipation requirements

Key specifications

Vdss
650 V
Id
142 A
Rds(on)
12 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

nth4l015n065sc1-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTH4L015N065SC1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 142A N-Channel Silicon Carbide (SiC) power MOSFET housed in a TO-247-4L package.