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NTH4L020N090SC1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTH4L020N090SC1 product

NTH4L020N090SC1

MOSFETs - Single

SiC MOSFET900VHigh Efficiency

The NTH4L020N090SC1 is a high-performance 900V SiC MOSFET optimized for high-efficiency power conversion.

Best for

  • UPS
  • DC-DC Converters
  • Boost Inverters

Avoid if

  • Low-power, cost-sensitive applications where standard silicon MOSFETs suffice.

Check before use

  • Gate drive voltage levels and thermal design.

Key specifications

Vdss
900 V
Id
116 A
Rds(on)
20 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Conversion

Datasheet

nth4l020n090sc1-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTH4L020N090SC1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) MOSFET rated for 900V and 116A, designed for high-efficiency power systems.