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NTH4L025N065SC1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTH4L025N065SC1 product

NTH4L025N065SC1

MOSFETs - Single

SiC MOSFET650VHigh Efficiency

The NTH4L025N065SC1 is a high-efficiency 650V SiC MOSFET optimized for power-dense applications requiring low switching losses.

Best for

  • SMPS
  • Solar Inverters
  • Energy Storage

Avoid if

  • Low-power applications where SiC cost-benefit is not justified.

Check before use

  • Gate drive voltage levels and thermal design.

Key specifications

VDSS
650 V
RDS(on)
19 mΩ
ID
99 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power SuppliesSolar Inverters

Datasheet

nth4l025n065sc1-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTH4L025N065SC1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) MOSFET rated for 650V and 99A, housed in a 4-lead TO-247 package.