NTH4L040N120M3S Datasheet, Specs, Alternatives & ECAD | onsemi | PartGenie

AI summary

NTH4L040N120M3S product

The NTH4L040N120M3S is a high-performance 1200V, 40mΩ SiC MOSFET in a TO-247-4L package, optimized for high-efficiency power conversion.

Best for

High-efficiency power conversion
High-frequency switching

Avoid if

Low-voltage applications where SiC is not cost-effective

Check before use

Gate drive voltage levels
Thermal dissipation requirements

Key specifications

VDSS: 1200 V
RDS(on): 40 mΩ
ID: 54 A

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power

Datasheet

nth4l040n120m3s-d.pdf

800 KB

CAD Models

Download ECAD models for NTH4L040N120M3S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an EliteSiC N-Channel MOSFET from onsemi, rated for 1200V and 40mΩ, designed for high-efficiency power switching.