ProjectsPricingInsights

NTH4L070N120M3S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTH4L070N120M3S product

NTH4L070N120M3S

UV

SiC MOSFET1200VEliteSiCHigh Efficiency

The NTH4L070N120M3S is a high-performance 1200V SiC MOSFET optimized for high-efficiency power conversion.

Best for

  • Solar Inverters
  • Electric Vehicle Charging Stations
  • Uninterruptible Power Supplies (UPS)

Avoid if

  • Low-voltage applications where SiC performance is not required.

Check before use

  • Gate drive voltage (recommended -3V/+18V) and thermal design.

Key specifications

Drain-Source Voltage
1200 V
RDS(on)
65 mΩ
Continuous Drain Current
34 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

nth4l070n120m3s-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTH4L070N120M3S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an EliteSiC N-Channel MOSFET from onsemi, rated for 1200V and 34A, featuring low RDS(on) and low gate charge.