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NTMD3P03-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTMD3P03-HXY product

NTMD3P03-HXY

MOSFETs

Dual P-ChannelMOSFETSOP-8

The NTMD3P03 is a dual P-Channel MOSFET in an SOP-8 package, optimized for PWM and load switching applications.

Best for

  • PWM control
  • Load switching

Avoid if

  • High-power applications exceeding 2.6W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

Vds
-30 V
Id
-5.3 A
Rds(on)
35 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

729107200b392a253562480d65722eb7_2403261742_HXY-MOSFET-NTMD3P03-HXY_C22367301.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTMD3P03-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual P-Channel enhancement mode MOSFET utilizing trench technology.