NTMD4820NR2G-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

NTMD4820NR2G-HXY product

The NTMD4820NR2G is a 30V N-Channel MOSFET in an SOP-8 package, optimized for low RDS(ON) and efficient switching in battery and power management circuits.

Best for

Battery protection
Load switching
UPS

Avoid if

High-voltage applications exceeding 30V
Applications requiring extremely low thermal resistance beyond SOP-8 capabilities

Check before use

PCB thermal design
Gate drive voltage levels

Key specifications

VDS: 30 V
ID: 8.5 A
RDS(ON): 18 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementBattery Protection

Datasheet

961dffa8f9a712e85d14ca165df06dca_2404231036_HXY-MOSFET-NTMD4820NR2G-HXY_C22366561.pdf

800 KB

CAD Models

Download ECAD models for NTMD4820NR2G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology, suitable for battery protection and load switching.