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NTMFS4C08N-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTMFS4C08N-HXY product

NTMFS4C08N-HXY

MOSFETs - Single

N-ChannelMOSFET30VDFN5X6-8L

The NTMFS4C08N is a 30V N-Channel SGT MOSFET in a DFN5X6-8L package, optimized for low RDS(on) and fast switching in power applications.

Best for

  • Synchronous rectification
  • Motor control
  • Power supply modules

Avoid if

  • Applications requiring high-voltage tolerance above 30V

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
60 A
RDS(on)
5.8 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Supplies

Datasheet

1f3cb74aae522e59a145ad61f18225e1_2404231719_HXY-MOSFET-NTMFS4C08N-HXY_C22366998.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTMFS4C08N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The NTMFS4C08N is an N-Channel Enhancement Mode MOSFET utilizing advanced SGT technology, designed for high-efficiency power conversion and motor control.