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NTR1P02-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTR1P02-HXY product

NTR1P02-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-23

The NTR1P02 is a P-Channel enhancement mode MOSFET in a SOT-23 package, optimized for low-voltage load switching and PWM applications.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-voltage applications exceeding -20V
  • High-current applications exceeding -2.3A

Check before use

  • Gate drive voltage requirements
  • Thermal dissipation limits

Key specifications

VDS
-20 V
ID
-2.3 A
RDS(on)
140 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Load SwitchPWM Control

Datasheet

6b338555f926b6bca13cb5e506c93d24_2404231719_HXY-MOSFET-NTR1P02-HXY_C22367179.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTR1P02-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using advanced trench technology, suitable for low-voltage switching.