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NTR2101PT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTR2101PT1G product

NTR2101PT1G

MOSFETs - Single

P-ChannelMOSFETSOT-23Low Voltage

The NTR2101PT1G is a compact, trench-technology P-Channel MOSFET optimized for low-voltage, high-side switching and DC-DC conversion.

Best for

  • High-side load switching
  • DC-DC conversion
  • Portable device power management

Avoid if

  • Applications requiring high voltage blocking (>8V)
  • High-power dissipation scenarios exceeding 0.96W

Check before use

  • Thermal dissipation on the PCB
  • Gate drive voltage levels

Key specifications

Vdss
-8.0 V
Id
-3.7 A
RDS(on) @ -4.5V
39 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

Power ManagementConsumer Electronics

Datasheet

NTR2101P-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTR2101PT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a small-signal P-Channel MOSFET in a SOT-23 package, designed for low-voltage gate drive applications.