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NTR2101PT1G-MS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTR2101PT1G-MS product

NTR2101PT1G-MS

MOSFETs - Single

P-ChannelMOSFETSOT-23Trench DMOS

The NTR2101PT1G-MS is a P-Channel enhancement mode MOSFET in a SOT-23 package, optimized for high-efficiency fast switching in portable electronics.

Best for

  • Battery-powered portable devices
  • Load switching

Avoid if

  • High-power applications exceeding 312mW dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-18 V
ID
-2.0 A
RDS(on)
60 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

0e6250475fe8a45feec8727402884843_2212290930_MSKSEMI-NTR2101PT1G-MS_C5343312.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTR2101PT1G-MS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel power MOSFET utilizing trench DMOS technology, designed for low on-state resistance and fast switching.