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NTR3A30PZ-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NTR3A30PZ-HXY product

NTR3A30PZ-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23Trench

The NTR3A30PZ is a P-Channel MOSFET in a SOT-23 package, designed for load switching and PWM applications with low RDS(ON) and ESD protection.

Best for

  • Load switches
  • PWM control circuits

Avoid if

  • High-power applications exceeding 1.4W dissipation

Check before use

  • Thermal dissipation on the PCB

Key specifications

VDS
-20 V
ID
-5 A
RDS(ON)
<40 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

f0720fea9f2daf597a4d0d2f427607cb_2403251714_HXY-MOSFET-NTR3A30PZ-HXY_C22366433.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NTR3A30PZ-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low-voltage switching applications.