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NVD5863NL-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NVD5863NL-HXY product

NVD5863NL-HXY

MOSFETs - Single

MOSFETN-Channel60VTO-252

The NVD5863NL is a 60V N-Channel MOSFET in a TO-252-2L package, designed for high-current switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring extremely low-profile packages or non-standard gate drive voltages.

Check before use

  • Thermal dissipation requirements at high current loads.

Key specifications

VDS
60 V
ID
80 A
RDS(on)
6 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

6d92a14faa19ac08cc1e7096746c821b_2403261739_HXY-MOSFET-NVD5863NL-HXY_C22366952.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NVD5863NL-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology.